Analog Electronics MCQ

Single-element semiconductors are characterized by atoms with ____ valence electrons.

A reverse bias pn junction has …………

An intrinsic semiconductor at  absolute zero temperature

In an intrinsic semiconductor, the number of free electrons

With a forward bias to a pn junction , the width of depletion layer

The battery connections required to forward bias a pn junction are ……

When a pure semiconductor is heated, its resistance …………..

A semiconductor has ………… temperature coefficient of resistance.

The most commonly used semiconductor is ………..

The random motion of holes and free electrons due to thermal agitation is called ……….

At room temperature, the current in an intrinsic semiconductor is due to

When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on……

What occurs when a conduction-band electron loses energy and falls back into a hole in the valence band?

In a semiconductor, current conduction is due to ……..

The movement of free electrons in a conductor is called

The movement of free electrons in a conductor is called

The leakage current in a pn junction is of the order of

What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon?

The barrier voltage at a pn junction for germanium is about ………

An atom is made up of

There is a small amount of current across the barrier of a reverse-biased diode. This current is called

What factor(s) do(es) the barrier potential of a pn junction depend on?

The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.

An n-type semiconductor is ………

How is the pn junction formed

What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon?

A trivalent impurity has ….. valence electrons

Doping of a semiconductor material means

In the depletion region of a pn junction, there is a shortage of ……..

A pentavalent impurity has ………. Valence electrons

A hole in a semiconductor is defined as …………….

The strength of a semiconductor crystal comes from ……..

The resistivity of pure germanium under standard conditions is about ……….

The boundary between p-type material and n-type material is called

As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ………..

Effectively, how many valence electrons are there in each atom within a silicon crystal?

Addition of trivalent impurity to a semiconductor creates many ……..

A forward biased pn junction diode has a resistance of the order of

A semiconductor has generally ……………… valence electrons.

An n-type semiconductor material

The resistivity of a pure silicon is about ……………

At room temperature, an intrinsic semiconductor has ……….

Single-element semiconductors are characterized by atoms with ____ valence electrons.

A hole and electron in close proximity would tend to ……….

In an n-type semiconductor, as temperature T increases, the Fermi level Ef

The boundary between p-type material and n-type material is called

What occurs when a conduction-band electron loses energy and falls back into a hole in the valence band?

When a pentavalent impurity is added to a pure semiconductor, it becomes ………

Which statement best describes an insulator?

Reverse breakdown is a condition in which a diode

The maximum number of electrons in each shell of an atom is

A semiconductor is formed by ……… bonds.

At absolute temperature, an intrinsic semiconductor has

The leakage current across a pn junction is due to …………..

Addition of pentavalent impurity to a semiconductor creates many ……..

Which of the following doping will produce a p-type semiconductor