Analog Electronics MCQ

Analogue Transistor

Analogue electronics MCQ provides mock tests in Analog electronics in preparation for professional and competitive examinations. RandomMCQ helps with the theoretical, conceptual, and analytical concepts for self-assessment in Analog Electronics.

Analogue electronics MCQ is a revision guide that covers topics like semiconductor theory, diodes (circuits and applications) transistors (circuits and applications), JFETs (circuits and applications), op-amps (circuits and applications), and basic analog circuit design as applied to audio and radio frequency circuits,like filters, oscillators,etc)

Are you preparing for a professional examination? Board Examinations in electrical and electronics? RandomMCQ is here to help.

RandomMCQ is an online reviewer in engineering that provides hundreds of multiple choice questions in analog electronics. The multiple choice questions will help students familiarize with analog electronics concepts


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Semiconductor Theory

This quiz is intended for checking your  knowledge on the Semiconductor Theory. It takes 20 minutes to pass the quiz. If you don’t finish the quiz within the mentioned time, all the unanswered questions will count as wrong. You can miss the questions by clicking the “Next” button and return to the previous questions by the “Previous” button. Every unanswered question will count as wrong.. Nevertheless, in case of skipping a question, you simply won’t get points. The Test will display 30 questions attached to the Quiz  by random. You need to get at least 80%  to pass the quiz.

Single-element semiconductors are characterized by atoms with ____ valence electrons.

A reverse bias pn junction has …………
An intrinsic semiconductor at  absolute zero temperature
In an intrinsic semiconductor, the number of free electrons
With a forward bias to a pn junction , the width of depletion layer
The battery connections required to forward bias a pn junction are ……
When a pure semiconductor is heated, its resistance …………..
A semiconductor has ………… temperature coefficient of resistance.
The most commonly used semiconductor is ………..
The random motion of holes and free electrons due to thermal agitation is called ……….
At room temperature, the current in an intrinsic semiconductor is due to

When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on……

What occurs when a conduction-band electron loses energy and falls back into a hole in the valence band?

In a semiconductor, current conduction is due to ……..

The movement of free electrons in a conductor is called

The movement of free electrons in a conductor is called

The leakage current in a pn junction is of the order of

What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon?

The barrier voltage at a pn junction for germanium is about ………

An atom is made up of

There is a small amount of current across the barrier of a reverse-biased diode. This current is called

What factor(s) do(es) the barrier potential of a pn junction depend on?

The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.
An n-type semiconductor is ………
How is the pn junction formed

What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon?

A trivalent impurity has ….. valence electrons

Doping of a semiconductor material means

In the depletion region of a pn junction, there is a shortage of ……..
A pentavalent impurity has ………. Valence electrons
A hole in a semiconductor is defined as …………….
The strength of a semiconductor crystal comes from ……..
The resistivity of pure germanium under standard conditions is about ……….

The boundary between p-type material and n-type material is called

As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ………..

Effectively, how many valence electrons are there in each atom within a silicon crystal?

Addition of trivalent impurity to a semiconductor creates many ……..
A forward biased pn junction diode has a resistance of the order of
A semiconductor has generally ……………… valence electrons.

An n-type semiconductor material

The resistivity of a pure silicon is about ……………

At room temperature, an intrinsic semiconductor has ……….

Single-element semiconductors are characterized by atoms with ____ valence electrons.

A hole and electron in close proximity would tend to ……….
In an n-type semiconductor, as temperature T increases, the Fermi level Ef

The boundary between p-type material and n-type material is called

What occurs when a conduction-band electron loses energy and falls back into a hole in the valence band?

When a pentavalent impurity is added to a pure semiconductor, it becomes ………

Which statement best describes an insulator?

Reverse breakdown is a condition in which a diode

The maximum number of electrons in each shell of an atom is

A semiconductor is formed by ……… bonds.
At absolute temperature, an intrinsic semiconductor has
The leakage current across a pn junction is due to …………..
Addition of pentavalent impurity to a semiconductor creates many ……..
Which of the following doping will produce a p-type semiconductor
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Electronics

Semiconductor Diode

This quiz is intended for checking your  knowledge on  Semiconductor Diodes. It takes 20 minutes to pass the quiz. If you don’t finish the quiz within the mentioned time, all the unanswered questions will count as wrong. You can miss the questions by clicking the “Next” button and return to the previous questions by the “Previous” button. Every unanswered question will count as wrong.. Nevertheless, in case of skipping a question, you simply won’t get points. The Test will display 30 questions attached to the Quiz out of 60  by random. You need to get at least 24 questions to pass the quiz.

A diode conducts when it is forward-biased, and the anode is connected to the __________ through a limiting resistor

A forward biased pn junction diode has a resistance of the order of
A 1,000 V power supply would use ……….. as a filter capacitor
When a crystal diode is used as a rectifier, the most important consideration is ………..
The leakage current across a pn junction is due to …………..

You have an unknown type of diode in a circuit. You measure the voltage across it and find it to be 0.3 V. The diode might be

When the crystal current diode current is large, the bias is …………

There is a small amount of current across the barrier of a reverse-biased diode. This current is called

The wide end arrow on a schematic indicates the __________ of a diode.

The barrier voltage at a pn junction for germanium is about ………

You have an application for a diode to be used in a tuning circuit. A type of diode to use might be

The movement of free electrons in a conductor is called

The PIV rating of a crystal diode is ………….. that of equivalent

Under normal conditions a diode conducts current when it i

The battery connections required to forward bias a pn junction are ……

An ideal diode presents a(n) _____ when reversed-biased and a(n) _____ when forward-biased.

A crystal diode utilises …………….. characteristic for rectification
A crystal diode has

The forward voltage across a conducting silicon diode is about

The forward voltage drop across a silicon diode is

about …………………
The knee voltage of a crystal diode is approximately equal
to ………….
When the graph between current through and voltage across a
device is a straight line, the device is referred to as ……………….
An ideal crystal diode is one which behaves as a perfect ………..
when forward biased

A reverse-biased diode has the _____ connected to the positive side of the source, and the _____ connected to the negative side of the source.

The ratio of reverse resistance and forward resistance of a
germanium crystal diode is about ………….
If the doping level of a crystal diode is increased, the breakdown
voltage………….
If the doping level in a crystal diode is increased, the width of depletion layer………..
How is the pn junction formed

A silicon diode measures a low value of resistance with the meter leads in both positions. The trouble, if any, is

Reverse breakdown is a condition in which a diode

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Bipolar Junction Transistors

This quiz is intended for checking your  knowledge on Bipolar Junction transistor. It takes 20 minutes to pass the quiz. If you don’t finish the quiz within the mentioned time, all the unanswered questions will count as wrong. You can miss the questions by clicking the “Next” button and return to the previous questions by the “Previous” button. Every unanswered question will count as wrong.. Nevertheless, in case of skipping a question, you simply won’t get points. The Test will display 30 questions attached to the Quiz  by random. You need to get at least 21 questions to pass the quiz.

Category: BJT

In a npn transistor, ……………. are the minority carriers

Category: BJT

If the value of collector current IC increases, then the value of VCE …………

Category: BJT

The base of a transistor is ………….. doped

Category: BJT

Transistor biasing is done to keep ………… in the circuit

Category: BJT

A semi-conductor is described as a "general purpose audio NPN device". This would be:

Category: BJT

In integrated circuits, npn construction is preferred to pnp construction because

Category: BJT

When the temperature changes, the operating point of a transistor  is shifted due to …….

Category: BJT

In a BJT with hfe = 100, hfb equals

Category: BJT

Transistor biasing is generally provided by a …………….

Category: BJT

If biasing is not done in an amplifier circuit, it results in

Category: BJT

If a low level signal is placed at the input to a transistor, a higher level of signal is produced at the output lead. This effect is know as:

Category: BJT

The three leads from a PNP transistor are named

Category: BJT

The input impedance of a transistor is ………….

Category: BJT

The collector of a transistor is …………. doped

Category: BJT

For proper operation of the transistor, its collector should have …………

Category: BJT

The stability factor of a collector feedback bias circuit is ……….. that of base resistor bias.

Category: BJT

In a base resistor method, if the value of ß changes by 50, then collector current will change by a factor ………

Category: BJT

The number of depletion layers in a transistor is …………

Category: BJT

The basic semi-conductor amplifying device is the:

Category: BJT

In a transistor, if the temperature increases, the value of VCE …………

Category: BJT

A transistor can be destroyed in a circuit by:

Category: BJT

The majority charge carriers in the emitter of an NPN transistor are

Category: BJT

The element that has the biggest size in a transistor is ………………..

Category: BJT

At the base-emitter junctions of a transistor, one finds ……………

Category: BJT

The phase difference between the input and output voltages of a transistor connected in common emitter arrangement is ……………… degrees.

Category: BJT

In the design of a biasing circuit, the value of collector load RC is determined by …………

Category: BJT

In a pnp transistor, the current carriers are

Category: BJT

A transistor in common emitter mode has

Category: BJT

The voltage gain of a transistor connected in common collector arrangement is ………..

Category: BJT

Most of the majority carriers from the emitter ………………..

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