Analog Electronics MCQ

Addition of trivalent impurity to a semiconductor creates many ……..

Reverse breakdown is a condition in which a diode

In a semiconductor, current conduction is due to ……..

The resistivity of pure germanium under standard conditions is about ……….

At room temperature, an intrinsic semiconductor has ……….

Which of the following doping will produce a p-type semiconductor

A semiconductor is formed by ……… bonds.

When a pure semiconductor is heated, its resistance …………..

The boundary between p-type material and n-type material is called

The strength of a semiconductor crystal comes from ……..

The most commonly used semiconductor is ………..

A hole and electron in close proximity would tend to ……….

Single-element semiconductors are characterized by atoms with ____ valence electrons.

When a pentavalent impurity is added to a pure semiconductor, it becomes ………

What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon?

The leakage current across a pn junction is due to …………..

A reverse bias pn junction has …………

The maximum number of electrons in each shell of an atom is

An n-type semiconductor is ………

An atom is made up of

A pentavalent impurity has ………. Valence electrons

An intrinsic semiconductor at  absolute zero temperature

A hole in a semiconductor is defined as …………….

Single-element semiconductors are characterized by atoms with ____ valence electrons.

Which statement best describes an insulator?

The resistivity of a pure silicon is about ……………

With a forward bias to a pn junction , the width of depletion layer

The random motion of holes and free electrons due to thermal agitation is called ……….

The barrier voltage at a pn junction for germanium is about ………

In the depletion region of a pn junction, there is a shortage of ……..

In an intrinsic semiconductor, the number of free electrons

The boundary between p-type material and n-type material is called

The leakage current in a pn junction is of the order of

What occurs when a conduction-band electron loses energy and falls back into a hole in the valence band?

In an n-type semiconductor, as temperature T increases, the Fermi level Ef

How is the pn junction formed

Effectively, how many valence electrons are there in each atom within a silicon crystal?

Addition of pentavalent impurity to a semiconductor creates many ……..

The movement of free electrons in a conductor is called

What factor(s) do(es) the barrier potential of a pn junction depend on?

As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ………..

There is a small amount of current across the barrier of a reverse-biased diode. This current is called

The battery connections required to forward bias a pn junction are ……

What occurs when a conduction-band electron loses energy and falls back into a hole in the valence band?

Doping of a semiconductor material means

A forward biased pn junction diode has a resistance of the order of

At absolute temperature, an intrinsic semiconductor has

The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.

When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on……

An n-type semiconductor material

A semiconductor has generally ……………… valence electrons.

The movement of free electrons in a conductor is called

At room temperature, the current in an intrinsic semiconductor is due to

What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon?

A trivalent impurity has ….. valence electrons

A semiconductor has ………… temperature coefficient of resistance.