Analog Electronics MCQ

Analogue Transistor

Analogue electronics MCQ provides mock tests in Analog electronics in preparation for professional and competitive examinations. RandomMCQ helps with the theoretical, conceptual, and analytical concepts for self-assessment in Analog Electronics.

Analogue electronics MCQ is a revision guide that covers topics like semiconductor theory, diodes (circuits and applications) transistors (circuits and applications), JFETs (circuits and applications), op-amps (circuits and applications), and basic analog circuit design as applied to audio and radio frequency circuits,like filters, oscillators,etc)

Are you preparing for a professional examination? Board Examinations in electrical and electronics? RandomMCQ is here to help.

RandomMCQ is an online reviewer in engineering that provides hundreds of multiple choice questions in analog electronics. The multiple choice questions will help students familiarize with analog electronics concepts


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Semiconductor Theory

This quiz is intended for checking your  knowledge on the Semiconductor Theory. It takes 20 minutes to pass the quiz. If you don’t finish the quiz within the mentioned time, all the unanswered questions will count as wrong. You can miss the questions by clicking the “Next” button and return to the previous questions by the “Previous” button. Every unanswered question will count as wrong.. Nevertheless, in case of skipping a question, you simply won’t get points. The Test will display 30 questions attached to the Quiz  by random. You need to get at least 80%  to pass the quiz.

The maximum number of electrons in each shell of an atom is

The strength of a semiconductor crystal comes from ……..

What occurs when a conduction-band electron loses energy and falls back into a hole in the valence band?

An n-type semiconductor is ………

When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on……

At room temperature, an intrinsic semiconductor has ……….

The leakage current in a pn junction is of the order of
How is the pn junction formed

What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon?

Reverse breakdown is a condition in which a diode

A semiconductor has ………… temperature coefficient of resistance.
A forward biased pn junction diode has a resistance of the order of
At room temperature, the current in an intrinsic semiconductor is due to
A semiconductor has generally ……………… valence electrons.
The battery connections required to forward bias a pn junction are ……
The random motion of holes and free electrons due to thermal agitation is called ……….
The most commonly used semiconductor is ………..

What occurs when a conduction-band electron loses energy and falls back into a hole in the valence band?

When a pure semiconductor is heated, its resistance …………..
A hole and electron in close proximity would tend to ……….

An atom is made up of

The boundary between p-type material and n-type material is called

The leakage current across a pn junction is due to …………..
The resistivity of pure germanium under standard conditions is about ……….
In an intrinsic semiconductor, the number of free electrons

Which statement best describes an insulator?

The barrier voltage at a pn junction for germanium is about ………
A trivalent impurity has ….. valence electrons
When a pentavalent impurity is added to a pure semiconductor, it becomes ………

What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon?

In a semiconductor, current conduction is due to ……..

The movement of free electrons in a conductor is called

A hole in a semiconductor is defined as …………….
The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.

An n-type semiconductor material

A pentavalent impurity has ………. Valence electrons

Single-element semiconductors are characterized by atoms with ____ valence electrons.

Doping of a semiconductor material means

As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ………..
With a forward bias to a pn junction , the width of depletion layer

What factor(s) do(es) the barrier potential of a pn junction depend on?

In an n-type semiconductor, as temperature T increases, the Fermi level Ef

Single-element semiconductors are characterized by atoms with ____ valence electrons.

The movement of free electrons in a conductor is called

An intrinsic semiconductor at  absolute zero temperature
A reverse bias pn junction has …………
In the depletion region of a pn junction, there is a shortage of ……..
The resistivity of a pure silicon is about ……………

There is a small amount of current across the barrier of a reverse-biased diode. This current is called

Which of the following doping will produce a p-type semiconductor
Addition of pentavalent impurity to a semiconductor creates many ……..
Addition of trivalent impurity to a semiconductor creates many ……..
At absolute temperature, an intrinsic semiconductor has

Effectively, how many valence electrons are there in each atom within a silicon crystal?

A semiconductor is formed by ……… bonds.

The boundary between p-type material and n-type material is called

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Electronics

Semiconductor Diode

This quiz is intended for checking your  knowledge on  Semiconductor Diodes. It takes 20 minutes to pass the quiz. If you don’t finish the quiz within the mentioned time, all the unanswered questions will count as wrong. You can miss the questions by clicking the “Next” button and return to the previous questions by the “Previous” button. Every unanswered question will count as wrong.. Nevertheless, in case of skipping a question, you simply won’t get points. The Test will display 30 questions attached to the Quiz out of 60  by random. You need to get at least 24 questions to pass the quiz.
The barrier voltage at a pn junction for germanium is about ………
The maximum efficiency of a half-wave rectifier is ………………..
If alternating current is applied to the anode of a diode, what would you expect to see at the cathode?

If the arrow of crystal diode symbol is positive w.r.t. bar, then diode is ………….. biased

What type of diode maintains a constant current?

The battery connections required to forward bias a pn junction are ……
If the temperature of a crystal diode increases, then leakage
current ………..

For a forward-biased diode, the barrier potential _____ as temperature increases.

There is a small amount of current across the barrier of a reverse-biased diode. This current is called

When the crystal current diode current is large, the bias is …………

A diode conducts when it is forward-biased, and the anode is connected to the __________ through a limiting resistor

In order for a diode to conduct, it must be:
If the PIV rating of a diode is exceeded, ………………
A half-wave rectifier has an input voltage of 240 V r.m.s. If the
step-down transformer has a turns ratio of 8:1, what is the peak load
voltage? Ignore diode drop.
If the doping level in a crystal diode is increased, the width of depletion layer………..

A silicon diode measures a low value of resistance with the meter leads in both positions. The trouble, if any, is

The depletion region in a Junction Diode contains
If the doping level of a crystal diode is increased, the breakdown
voltage………….
The most widely used rectifier is ……………….

The forward voltage drop across a silicon diode is

about …………………
A 10 V power supply would use …………………. as filter capacitor.

What factor(s) do(es) the barrier potential of a pn junction depend on?

A reverse-biased diode has the _____ connected to the positive side of the source, and the _____ connected to the negative side of the source.

The PIV rating of a crystal diode is ………….. that of equivalent

As the forward current through a silicon diode increases, the internal resistance

The most common type of diode failure is a(n) _____.

As the forward current through a silicon diode increases, the voltage across the diode

The ratio of reverse resistance and forward resistance of a
germanium crystal diode is about ………….
When the graph between current through and voltage across a
device is a straight line, the device is referred to as ……………….

The wide end arrow on a schematic indicates the __________ of a diode.

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Bipolar Junction Transistors

This quiz is intended for checking your  knowledge on Bipolar Junction transistor. It takes 20 minutes to pass the quiz. If you don’t finish the quiz within the mentioned time, all the unanswered questions will count as wrong. You can miss the questions by clicking the “Next” button and return to the previous questions by the “Previous” button. Every unanswered question will count as wrong.. Nevertheless, in case of skipping a question, you simply won’t get points. The Test will display 30 questions attached to the Quiz  by random. You need to get at least 21 questions to pass the quiz.

Category: BJT

Which configuration has unity voltage gain (ideal)

Category: BJT

The power gain in a transistor connected in ……………. arrangement is the highest

Category: BJT

In a pnp transistor, the current carriers are

Category: BJT

The three leads from a PNP transistor are named

Category: BJT

As the temperature of a transistor goes up, the base-emitter resistance-_______

Category: BJT

Most of the majority carriers from the emitter ………………..

Category: BJT

Transistor biasing is generally provided by a …………….

Category: BJT

The majority charge carriers in the emitter of an NPN transistor are

Category: BJT

If a low level signal is placed at the input to a transistor, a higher level of signal is produced at the output lead. This effect is know as:

Category: BJT

The number of depletion layers in a transistor is …………

Category: BJT

A transistor in common emitter mode has

Category: BJT

The value of  of a transistor's VBE …………….

Category: BJT

The output impedance of a transistor connected in ……………. arrangement is the highest

Category: BJT

The phase difference between the input and output voltages of a transistor connected in common emitter arrangement is ……………… degrees.

Category: BJT

The basic semi-conductor amplifying device is the:

Category: BJT

A transistor has ………………… pn junctions

Category: BJT

In integrated circuits, npn construction is preferred to pnp construction because

Category: BJT

For proper operation of the transistor, its collector should have …………

Category: BJT

When the temperature changes, the operating point of a transistor  is shifted due to …….

Category: BJT

The voltage gain in a transistor connected in ……………….arrangement is the highest

Category: BJT

In a base resistor method, if the value of ß changes by 50, then collector current will change by a factor ………

Category: BJT

At the base-emitter junctions of a transistor, one finds ……………

Category: BJT

.In a pnp transistor, the current carriers are

Category: BJT

A semi-conductor is described as a "general purpose audio NPN device". This would be:

Category: BJT

Transistor Operating point represents

Category: BJT

The voltage gain of a transistor connected in common collector arrangement is ………..

Category: BJT

The base of a transistor is ………….. doped

Category: BJT

In a npn transistor, ……………. are the minority carriers

Category: BJT

In a BJT with hfe = 100, hfb equals

Category: BJT

Transistor biasing is done to keep ………… in the circuit

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