Analog Electronics MCQ

What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon?

Which of the following doping will produce a p-type semiconductor

The most commonly used semiconductor is ………..

What occurs when a conduction-band electron loses energy and falls back into a hole in the valence band?

The random motion of holes and free electrons due to thermal agitation is called ……….

Single-element semiconductors are characterized by atoms with ____ valence electrons.

A forward biased pn junction diode has a resistance of the order of

The barrier voltage at a pn junction for germanium is about ………

The leakage current in a pn junction is of the order of

The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.

A semiconductor has ………… temperature coefficient of resistance.

How is the pn junction formed

There is a small amount of current across the barrier of a reverse-biased diode. This current is called

A pentavalent impurity has ………. Valence electrons

When a pure semiconductor is heated, its resistance …………..

Doping of a semiconductor material means

At room temperature, an intrinsic semiconductor has ……….

The maximum number of electrons in each shell of an atom is

Addition of trivalent impurity to a semiconductor creates many ……..

With a forward bias to a pn junction , the width of depletion layer

What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon?

In an intrinsic semiconductor, the number of free electrons

The resistivity of a pure silicon is about ……………

Effectively, how many valence electrons are there in each atom within a silicon crystal?

The movement of free electrons in a conductor is called

The movement of free electrons in a conductor is called

In an n-type semiconductor, as temperature T increases, the Fermi level Ef

In a semiconductor, current conduction is due to ……..

The strength of a semiconductor crystal comes from ……..

A hole in a semiconductor is defined as …………….

At room temperature, the current in an intrinsic semiconductor is due to

The battery connections required to forward bias a pn junction are ……

The boundary between p-type material and n-type material is called

Which statement best describes an insulator?

Reverse breakdown is a condition in which a diode

An n-type semiconductor is ………

An n-type semiconductor material

The leakage current across a pn junction is due to …………..

Addition of pentavalent impurity to a semiconductor creates many ……..

When a pentavalent impurity is added to a pure semiconductor, it becomes ………

A reverse bias pn junction has …………

Single-element semiconductors are characterized by atoms with ____ valence electrons.

A semiconductor has generally ……………… valence electrons.

At absolute temperature, an intrinsic semiconductor has

An intrinsic semiconductor at  absolute zero temperature

When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on……

An atom is made up of

What occurs when a conduction-band electron loses energy and falls back into a hole in the valence band?

A hole and electron in close proximity would tend to ……….

The boundary between p-type material and n-type material is called

A trivalent impurity has ….. valence electrons

What factor(s) do(es) the barrier potential of a pn junction depend on?

A semiconductor is formed by ……… bonds.

As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ………..

In the depletion region of a pn junction, there is a shortage of ……..

The resistivity of pure germanium under standard conditions is about ……….