Analog Electronics MCQ

Analogue Transistor

Analogue electronics MCQ provides mock tests in Analog electronics in preparation for professional and competitive examinations. RandomMCQ helps with the theoretical, conceptual, and analytical concepts for self-assessment in Analog Electronics.

Analogue electronics MCQ is a revision guide that covers topics like semiconductor theory, diodes (circuits and applications) transistors (circuits and applications), JFETs (circuits and applications), op-amps (circuits and applications), and basic analog circuit design as applied to audio and radio frequency circuits,like filters, oscillators,etc)

Are you preparing for a professional examination? Board Examinations in electrical and electronics? RandomMCQ is here to help.

RandomMCQ is an online reviewer in engineering that provides hundreds of multiple choice questions in analog electronics. The multiple choice questions will help students familiarize with analog electronics concepts


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Semiconductor Theory

This quiz is intended for checking your  knowledge on the Semiconductor Theory. It takes 20 minutes to pass the quiz. If you don’t finish the quiz within the mentioned time, all the unanswered questions will count as wrong. You can miss the questions by clicking the “Next” button and return to the previous questions by the “Previous” button. Every unanswered question will count as wrong.. Nevertheless, in case of skipping a question, you simply won’t get points. The Test will display 30 questions attached to the Quiz  by random. You need to get at least 80%  to pass the quiz.

What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon?

Which of the following doping will produce a p-type semiconductor
The most commonly used semiconductor is ………..

What occurs when a conduction-band electron loses energy and falls back into a hole in the valence band?

The random motion of holes and free electrons due to thermal agitation is called ……….

Single-element semiconductors are characterized by atoms with ____ valence electrons.

A forward biased pn junction diode has a resistance of the order of
The barrier voltage at a pn junction for germanium is about ………
The leakage current in a pn junction is of the order of
The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.
A semiconductor has ………… temperature coefficient of resistance.
How is the pn junction formed

There is a small amount of current across the barrier of a reverse-biased diode. This current is called

A pentavalent impurity has ………. Valence electrons
When a pure semiconductor is heated, its resistance …………..

Doping of a semiconductor material means

At room temperature, an intrinsic semiconductor has ……….

The maximum number of electrons in each shell of an atom is

Addition of trivalent impurity to a semiconductor creates many ……..
With a forward bias to a pn junction , the width of depletion layer

What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon?

In an intrinsic semiconductor, the number of free electrons
The resistivity of a pure silicon is about ……………

Effectively, how many valence electrons are there in each atom within a silicon crystal?

The movement of free electrons in a conductor is called

The movement of free electrons in a conductor is called

In an n-type semiconductor, as temperature T increases, the Fermi level Ef
In a semiconductor, current conduction is due to ……..
The strength of a semiconductor crystal comes from ……..
A hole in a semiconductor is defined as …………….
At room temperature, the current in an intrinsic semiconductor is due to
The battery connections required to forward bias a pn junction are ……

The boundary between p-type material and n-type material is called

Which statement best describes an insulator?

Reverse breakdown is a condition in which a diode

An n-type semiconductor is ………

An n-type semiconductor material

The leakage current across a pn junction is due to …………..
Addition of pentavalent impurity to a semiconductor creates many ……..
When a pentavalent impurity is added to a pure semiconductor, it becomes ………
A reverse bias pn junction has …………

Single-element semiconductors are characterized by atoms with ____ valence electrons.

A semiconductor has generally ……………… valence electrons.
At absolute temperature, an intrinsic semiconductor has
An intrinsic semiconductor at  absolute zero temperature

When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on……

An atom is made up of

What occurs when a conduction-band electron loses energy and falls back into a hole in the valence band?

A hole and electron in close proximity would tend to ……….

The boundary between p-type material and n-type material is called

A trivalent impurity has ….. valence electrons

What factor(s) do(es) the barrier potential of a pn junction depend on?

A semiconductor is formed by ……… bonds.
As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ………..
In the depletion region of a pn junction, there is a shortage of ……..
The resistivity of pure germanium under standard conditions is about ……….
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Electronics

Semiconductor Diode

This quiz is intended for checking your  knowledge on  Semiconductor Diodes. It takes 20 minutes to pass the quiz. If you don’t finish the quiz within the mentioned time, all the unanswered questions will count as wrong. You can miss the questions by clicking the “Next” button and return to the previous questions by the “Previous” button. Every unanswered question will count as wrong.. Nevertheless, in case of skipping a question, you simply won’t get points. The Test will display 30 questions attached to the Quiz out of 60  by random. You need to get at least 24 questions to pass the quiz.
The maximum efficiency of a half-wave rectifier is ………………..
How is the pn junction formed

If the arrow of crystal diode symbol is positive w.r.t. bar, then diode is ………….. biased

You have an unknown type of diode in a circuit. You measure the voltage across it and find it to be 0.3 V. The diode might be

A half-wave rectifier has an input voltage of 240 V r.m.s. If the
step-down transformer has a turns ratio of 8:1, what is the peak load
voltage? Ignore diode drop.
The leakage current in a crystal diode is due to …………….

The forward voltage drop across a silicon diode is

about …………………
The ……………….. filter circuit results in the best voltage regulation

Reverse breakdown is a condition in which a diode

An ideal crystal diode is one which behaves as a perfect ………..
when forward biased
The leakage current across a pn junction is due to …………..
The most widely used rectifier is ……………….

As the forward current through a silicon diode increases, the internal resistance

The knee voltage of a crystal diode is approximately equal
to ………….

A silicon diode is forward-biased. You measure the voltage to ground from the anode at _____, and the voltage from the cathode to ground at _____.

For a forward-biased diode, as temperature is _____, the forward current _____ for a given value of forward voltage.

A crystal diode has forward resistance of the order of ……………
When the graph between current through and voltage across a
device is a straight line, the device is referred to as ……………….
The ratio of reverse resistance and forward resistance of a
germanium crystal diode is about ………….
If the doping level in a crystal diode is increased, the width of depletion layer………..

The movement of free electrons in a conductor is called

Under normal conditions a diode conducts current when it i

A crystal diode has
If the temperature of a crystal diode increases, then leakage
current ………..
In a semi-conductor diode, electrons flow from:
A crystal diode utilises …………….. characteristic for rectification

For a forward-biased diode, the barrier potential _____ as temperature increases.

When the crystal current diode current is large, the bias is …………

There is a small amount of current across the barrier of a reverse-biased diode. This current is called

The depletion region in a Junction Diode contains

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Bipolar Junction Transistors

This quiz is intended for checking your  knowledge on Bipolar Junction transistor. It takes 20 minutes to pass the quiz. If you don’t finish the quiz within the mentioned time, all the unanswered questions will count as wrong. You can miss the questions by clicking the “Next” button and return to the previous questions by the “Previous” button. Every unanswered question will count as wrong.. Nevertheless, in case of skipping a question, you simply won’t get points. The Test will display 30 questions attached to the Quiz  by random. You need to get at least 21 questions to pass the quiz.

Category: BJT

In integrated circuits, npn construction is preferred to pnp construction because

Category: BJT

In a transistor, if the temperature increases, the value of VCE …………

Category: BJT

The value of  of a transistor's VBE …………….

Category: BJT

Most of the majority carriers from the emitter ………………..

Category: BJT

If a low level signal is placed at the input to a transistor, a higher level of signal is produced at the output lead. This effect is know as:

Category: BJT

A semi-conductor is described as a "general purpose audio NPN device". This would be:

Category: BJT

The collector of a transistor is …………. doped

Category: BJT

The basic semi-conductor amplifying device is the:

Category: BJT

As the temperature of a transistor goes up, the base-emitter resistance-_______

Category: BJT

If the value of collector current IC increases, then the value of VCE …………

Category: BJT

In a pnp transistor, the current carriers are

Category: BJT

The most commonly used transistor arrangement is ……………arrangement

Category: BJT

Transistor Operating point represents

Category: BJT

The voltage gain in a transistor connected in ……………….arrangement is the highest

Category: BJT

In the design of a biasing circuit, the value of collector load RC is determined by …………

Category: BJT

At the base-emitter junctions of a transistor, one finds ……………

Category: BJT

The input impedance of a transistor is ………….

Category: BJT

A transistor in common emitter mode has

Category: BJT

Which configuration has unity voltage gain (ideal)

Category: BJT

The majority charge carriers in the emitter of an NPN transistor are

Category: BJT

The base of a transistor is ………….. doped

Category: BJT

The number of depletion layers in a transistor is …………

Category: BJT

Transistor biasing is done to keep ………… in the circuit

Category: BJT

When the temperature changes, the operating point of a transistor  is shifted due to …….

Category: BJT

The three leads from a PNP transistor are named

Category: BJT

For proper operation of the transistor, its collector should have …………

Category: BJT

In a BJT with hfe = 100, hfb equals

Category: BJT

In a npn transistor, ……………. are the minority carriers

Category: BJT

Transistor biasing is generally provided by a …………….

Category: BJT

The stabilisation of transistor operating point in potential divider method is provided by ……….

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