Analog Electronics MCQ

The maximum number of electrons in each shell of an atom is

The strength of a semiconductor crystal comes from ……..

What occurs when a conduction-band electron loses energy and falls back into a hole in the valence band?

An n-type semiconductor is ………

When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on……

At room temperature, an intrinsic semiconductor has ……….

The leakage current in a pn junction is of the order of

How is the pn junction formed

What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon?

Reverse breakdown is a condition in which a diode

A semiconductor has ………… temperature coefficient of resistance.

A forward biased pn junction diode has a resistance of the order of

At room temperature, the current in an intrinsic semiconductor is due to

A semiconductor has generally ……………… valence electrons.

The battery connections required to forward bias a pn junction are ……

The random motion of holes and free electrons due to thermal agitation is called ……….

The most commonly used semiconductor is ………..

What occurs when a conduction-band electron loses energy and falls back into a hole in the valence band?

When a pure semiconductor is heated, its resistance …………..

A hole and electron in close proximity would tend to ……….

An atom is made up of

The boundary between p-type material and n-type material is called

The leakage current across a pn junction is due to …………..

The resistivity of pure germanium under standard conditions is about ……….

In an intrinsic semiconductor, the number of free electrons

Which statement best describes an insulator?

The barrier voltage at a pn junction for germanium is about ………

A trivalent impurity has ….. valence electrons

When a pentavalent impurity is added to a pure semiconductor, it becomes ………

What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon?

In a semiconductor, current conduction is due to ……..

The movement of free electrons in a conductor is called

A hole in a semiconductor is defined as …………….

The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.

An n-type semiconductor material

A pentavalent impurity has ………. Valence electrons

Single-element semiconductors are characterized by atoms with ____ valence electrons.

Doping of a semiconductor material means

As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ………..

With a forward bias to a pn junction , the width of depletion layer

What factor(s) do(es) the barrier potential of a pn junction depend on?

In an n-type semiconductor, as temperature T increases, the Fermi level Ef

Single-element semiconductors are characterized by atoms with ____ valence electrons.

The movement of free electrons in a conductor is called

An intrinsic semiconductor at  absolute zero temperature

A reverse bias pn junction has …………

In the depletion region of a pn junction, there is a shortage of ……..

The resistivity of a pure silicon is about ……………

There is a small amount of current across the barrier of a reverse-biased diode. This current is called

Which of the following doping will produce a p-type semiconductor

Addition of pentavalent impurity to a semiconductor creates many ……..

Addition of trivalent impurity to a semiconductor creates many ……..

At absolute temperature, an intrinsic semiconductor has

Effectively, how many valence electrons are there in each atom within a silicon crystal?

A semiconductor is formed by ……… bonds.

The boundary between p-type material and n-type material is called